Stacked SOI CMOS Fabricated with Seeding Lateral Epitaxy

Electron beam (EB) annealing has several advantages over laser annealing, such as annealing capability of large area or controllability of the incident beam. On the other hand, orientation control of SOI (Silicon On Insulator) is essential to realize three dimensional (3D) LSI's which require uniform and reproducible device characteristics. Seeding-lateral epitaxy (SLE) has been studied as the most promising method to the orientation control [1]. However, fabrication of stacked-structure devices using SLE normally encounters a difficulty; SOI is easily overheated or evaporated owing to the thick insulator which protects the underlying devices from melting. This is just the case in EB annealing. So far, no report is known on the fabrication of stacked devices using EB while controlling crystal orientation.