High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs

Ultrathin Ta
₂
O
₅
films have been deposited on ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage current characteristics of Ta
₂
O
₅
films have been investigated in the temperature range of 27-200degC. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.