New CMOS devices and compact modeling

FinFET provides several advantages over the planar MOSFET structure—less short-channel effect, less variation in threshold voltage, and higher carrier mobility, allowing scaling to 5nm gate length. Using embedded SRAM as the entry point, FinFET may enter manufacturing at the 32nm node. BSIM-MG is a turn-key compact model of multi-gate MOSFETs fabricated on either SOI or bulk substrates. A compact model of multi-gate transistors will facilitate their adoption.