Ultrabroadband and compact power dividers/combiners on gallium arsenide substrate [Application Notes]

Multilayer and multiconductor technologies such as Si- and gallium arsenide (GaAs)- based MMICs and LTCCs have resulted in compact components. In such technologies, lumped elements can be realized easily and have become attractive in reducing the size of passive components. A compensation technique to realize compact multioctave bandwidth two-way power splitters is presented in this article.