Abstract:
The most effective acceleration factor of reliability is the high voltage stress. However high electric field generated on thin gate oxide transistors in nanometer techno...Show MoreMetadata
Abstract:
The most effective acceleration factor of reliability is the high voltage stress. However high electric field generated on thin gate oxide transistors in nanometer technology becomes the uppermost limit. In this paper, an improved voltage stress method for DRAM with the 6F2 structure and the open bit line scheme is proposed to enhance the Early Life Failure Rates (ELFR) and the yield of package test. The proposed method reduces the degradation of transistors caused by a high voltage stress. Experimental results show that the proposed method improves the yield of package test and the characteristic of refresh, and avoids the degradation of transistors using voltage ramp stress (VRS).
Published in: 4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008)
Date of Conference: 23-25 January 2008
Date Added to IEEE Xplore: 03 March 2008
Electronic ISBN:978-1-5090-7977-3
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