A New Light Source for EUV Lithography

A new type of X-ray laser could give hope to the semiconductor industry as it struggles to continue its march toward miniaturization. This next-generation chip-making tool was developed at the National Science Foundation's Engineering Research Center for Extreme Ultraviolet Science and Technology, located at Colorado State University, in Fort Collins.The laser operates at wavelengths of 18.9 and 13.9 nanometers, the latter fine enough for extreme ultraviolet (EUV) lithography, which will be needed to manufacture the generation of chips that are to become available around 2011.