Atomic structure analysis of ErSi2 nanowires formed on Si(100) substrates

Erbium silicide (ErSi
₂
) nanowires formed on Si substrate are promising candidates for one-dimensional devices because of their low resistivities and low Schottky barrier heights with Si. In this study, we fabricated ErSi
₂
nanowires by the self-assemblly growing process achieved by simple spin-coating and post annealing processes. Surface and cross-sectional investigations have been presented to clarify the chemical composition and the crystal structure of wires.Si(100) wafers with a high resistivity of 1000 Omega cm were coated by ErCl3 using the spin-coating method after removing the natural oxide layer on the surfaces. ErSi2 nanowires were fabricated by annealing the samples at temperatures of 800 degC for 5 min in vacuum with a pressure of lx 10
^-3
Pa. A scanning electron microscope (SEM) was used to investigate the wires surface shape, density, and their average length and width. A transmission electron microscope (TEM) observation was performed using samples cut by a focused ion beam (FIB) system.