A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

In this paper, a radio frequency (RF) CMOS multiple bands low noise amplifier using a high-Q active inductor load with a binary code band selector suitable for multi-standards wireless applications is proposed. By employing an improved high-Q active inductor including two bits binary controlled code, the multi-band low noise amplifier operating at four different frequency bands is realized. The proposed amplifier circuit is designed in TSMC 0.18-um CMOS technology. Based on the simulation results, the amplifier can operate at 900 MHz, 1.8 GHz, 1.9 GHz, and 2.4 GHz with forward gain (S
₂₁
) of 31.15 dB, 30.82 dB, 30.61 dB, and 28.4 dB, and the noise figure (NF) of 0.563 dB, 0.558 dB, 0.578 dB, and 0.759 dB, respectively. Furthermore, the power dissipation of this amplifier can retain constant at all operating frequency bands and consume around 11.66 mW from 1.8-V power supply. The occupied area of this amplifier is about 158 times 76 mm
²
.