Misalignment of the Block Oxide Height in Self-aligned Source/Drain-tied bFDSOI-FET

This paper aims to comprehensively examine the electrical characteristics of a new silicon-on-insulator (SOI) device structure with source/drain (S/D) tie as a function of the block oxide height. According to the 2-D simulations, the height of the block oxide enclosing the silicon body is one of the key parameters for determining the device properties and their fluctuations. Additionally, the self-heating effects (SHEs) can be well controlled chiefly due to the presence of the S/D-tied scheme.