The Effect of Mobility Enhanced Technology on Device Characteristic and Reliability for sub-90nm SOI nMOSFETs

For SOI nMOSFET, the impact of high tensile stress contact etching stop (CESL) SiN layer on device performance and reliability were investigated. In this work, device driving capability can be enhanced with thicker CESL layer, larger LOD and narrower gate width. With electrical and body potential inspection, larger STI-induced edge current was found especially in narrow gate device.