Compact Model for Electric Field at Pinch-Off and Channel Length Shortening in Bulk MOSFET

In this paper a new way is presented to calculate the electric field in the pinch-off point in analytical closed-form without the introduction of unphysical fitting parameters. For that the Poisson equation is solved in 2D by conformal mapping technique. Hereof a model for channel length shortening in saturation is derived. The results are in good agreement with numerical results down to an effective channel length of 50 nm.