Damascene Cu : Dielectric nitride capping surface plasma treatment optimization for flash memory devices

This paper discusses the integrated NH
₃
plasma treatment (PT) windowing along with the Cu and dielectric capping layer process windowing on 90 and 65 nm flash memory. Results are presented on in-fab defect observations; the material properties as measured by SIMS, g-FTIR, AFM and TEM; the electrical affects on Cu metal sheet rho, leakage and VRDB; the experimental sort bins; and the backend package memory device reliability measures on electromigration, stress migration, charge loss/charge gain, HTOL and data retention bake. The results demonstrate a viable in situ NH
₃
plasma treatment process within the dielectric capping layer process for memory product applications that meet wireless, consumer and automotive industry product specifications.