Mass Metrology for controlling and understanding processes

In this paper we report on mass metrology used for the characterization of different process steps (etch, clean, cavity etch, HARP deposition and CMP) of shallow trench isolation (STI) module in conventional CMOS technology. We also report on mass metrology for the characterization of plasma doping and on HfO₂ high k gate dielectric deposition process. The performance of the mass balance metrology is benchmarked against state of the art metrology, including ellipsometry and Rutherford Backscattering (RBS).