SEMSIM: Adaptive Multiscale Simulation For Single-Electron Devices

Single-electron devices have drawn much attention in the last two decades. They have been widely used for device research and also show promise as a potential alternative to CMOS circuits due to their ultralow power dissipation. Three techniques have been used for single-electron device modeling in the past, including Monte Carlo (MC), master equation, and SPICE modeling. Among these, MC method provides accuracy, but lacks the time efficiency required for large-scale simulation. In this paper, we introduce an adaptive multiscale approach to single-electron device simulation using MC method as basis, which significantly improves time efficiency while maintaining accuracy. We have shown that it is possible to reduce simulation time up to nearly 40 times and maintain an average error of 3.3%. Going beyond simplistic approximations, we have modeled important secondary effects including cotunneling and Cooper pair tunneling, which are critical for device research.