0.18um CMOS Low-Noise Amplifier with two 2nd-order notch filters for Ultra-Wideband Wireless Receiver

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2
^nd
-order notch filters and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.1dB maximum power gain between 3.0GHz-4.9GHz and 15.5dB maximum power gain between 6.2GHz-10.2GHz while consuming 21.9mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.2GHz-10.2GHz, a minimum noise figure is 2.5dB and 2.8dB. Input return loss lower than - 6.4dB in all bandwidth have been achieved.