Gamma-radiation dosimetry with magnetic Czochralski silicon diode

This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p
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/n/n
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junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.