Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation Process

An original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction with silicon or standing on insulating layers can be transformed into the
$\hbox{PtGe}_{2}$
phase. The solubility of this phase in a sulfuric peroxide mixture (SPM) without altering PtSi is demonstrated. The suitability and scalability of the proposed integration scheme is shown through the successful integration and characterization of PtSi source/drain contacts in p-type MOSFETs.