Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy

Extrinsic p-type doping of Mercury Cadmium Tel-luride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR), Secondary Ion Mass Spectrometry (SIMS) as well as variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) to study the Hall effect characteristics. Arsenic activation annealing of the samples were performed and magneto-transport measurements repeated. Results indicate that as-grown samples show n-type behaviour indicating that arsenic incorporate as donors in the material with annealed samples showing p-type characteristics with heavy compensation.