Characterisation of Electron Transport in MBE Grown Indium Nitride

Transport properties of multiple electron species in two samples of indium nitride (InN) grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity data were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of two electron species, attributed to the bulk and a surface accumulation layer. While the properties of the bulk electron species remain consistent between the samples, grown under similar conditions, the surface properties are found to vary significantly.