SCR-based ESD Protection for High Bandwidth DRAMs

A modified SCR (silicon controlled rectifier) is proposed as an ESD protection for high speed signaling systems. With low voltage triggering (LVT) characteristics and good turn-on uniformity, the proposed SCR scheme accomplishes both goals, high discharging capability and C
_in
(input capacitance) reduction. The fabricated chips with the new ESD scheme passed the severe package level EOS test conditions such as HBM-5 kV and MM-500 V stress. The input capacitance, C
_in
, was measured to be 1.5 pF which satisfies the DDR3-1066 specification with enough margin. We have observed in SPICE simulation that the data eye can be enlarged to 277 ps (55.3% of UI) in DDR3 interface at 2 Gbps operation due to the C
_in
reduction effect.