Improvement of the Performance of Strained 0.13 μm MOSFETs Mounted on Flexible Plastic Substrates

The RF performance of 0.18mum thin-body (30mum) Si MOSFETs can be enhanced by applying mechanical strain. Here we report the DC to RF performance of 0.13mum thin-body (40mum) Si MOSFETs on plastic. The data were close to control 0.13m devices, indicating negligible process-related degradation. The DC- RF performance was enhanced by applying 0.7% tensile strain. The DC-RF performance improvements were confirmed by TMA simulations for strained 0.13mum MOSFETs.