Light emitting diodes on glass and silicon substrates fabricated using novel low temperature hydrogenation-assisted nano-crystallization of silicon thin films

Nano-porous silicon films have drawn significant attention for the realization of light emitting diodes on silicon substrates. We report a novel low temperature fully radio-frequency plasma hydrogenation assisted process to realize light emitting diodes on glass substrates. Such devices can be of great importance for lighting applications, as an alternative approach for organic LED's or I-V compounds. The process outlined in this paper, can be used to realize large area light emitting diodes on inexpensive substrates. All the processing steps remain below 450degC fully compatible with normal glass substrates.