Selective doping and optimization of InGaN channel and InGaN backbarrier in deep submicron GaN heterojunction field effect transistor with a recessed gate

The authors employed a selective doping technique that was developed in our group to reduce the high electrical field around the recessed gate and improve the electric field profile in the ungated drift region for supporting high voltage. We also used an InGaN channel and an InGaN back-barrier to increase the confinement of the 2DEG.