AlGaN/GaN HEMT without Schottky contact on the dry-etched region for high breakdown voltage

The purpose of our work is to propose and fabricate a new AlGaN/GaN HEMT without Schottky contact on the dry-etched region to decrease leakage current and to improve high breakdown voltage. The proposed device does not have any Schottky contact on the mesa etched region because the Schottky contact formation is performed prior to the mesa isolation. The measured breakdown voltage of the proposed device was 302.0 V while that of the conventional device was 70.4 V. These results show that the proposed device decrease the leakage current through the Schottky contact on the mesa-etched region.