1-D wavefunction localization and effective quantum wire behavior inside QWs deposited on textured GaN materials

Recent experiments measuring photoluminescence from AlGaN quantum wells deposited on textured (multi-faceted) GaN material have reported an order of magnitude increase in the internal quantum efficiency (Cabalu et al., 2006). Furthermore narrow spot size electroluminescence showed that radiation is emitted predominantly from "quantum wedges" (QWG) formed at the locations were plane quantum wells (QW) intersect at an angle, such as shown in Fig la.