Dimensional dependences of the dynamic-NBTI with 1.2 nm N20-ISSG oxynitrides

We compare RTO, N₂O-ISSG and RPNO ultrathin oxynitride gate dielectrics with equal physical oxide thickness of 12 A under negative bias temperature instability (NBTI) degradation and/or dynamic NBTI (DNBTI) reliability for ultra-thin SiON gate dielectrics in pMOSFET devices. It was found that the N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties and excellent reliability. This is a very crucial issue for the present and future CMOS ULSI using ultra-thin SiON gate dielectrics in pMOSFET devices.