A high-k Y2TiO5 charge trapping layer for high-density flash memory application

In this paper, high-k Y
₂
TiO
₅
metal-oxide-high-k material-oxide-silicon type (MOHOS) memory fabricated through RF sputtering. The XRD, XPS, and AFM analyses indicate the formation of oxide/Y
₂
TiO
₅
/oxide memory after annealing at 900 degC. The electrical characteristics are in terms of 4.2 V memory window and long charge retention time due to deep trap level in the high-k Y
₂
TiO
₅
layer.