SiGe BiCMOS Technology with 3.0 ps Gate Delay

This work reports on a 130 nm BiCMOS technology with high-speed SiGe:C HBTs featuring a transit frequency of 255 GHz and a maximum oscillation frequency of 315 GHz at an emitter area of 0.17 x 0.53 mum
²
. A minimum gate delay of 3.0 ps was achieved for CML ring oscillators. Breakdown voltages of the HBTs are measured to be BV
_CEO
=1.8 V, BV
_CBO
=5.6 V, andBV
_EBO
=1.9 V.