0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

A 0.1 μm In
₀₂
Al
₀₈
Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In
₀₂
Al
₀₈
Sb layer was utilized to replace the upper AlSb layer in the conventional AlSb-InAs HEMT in order to mitigate the oxidation incurred by the AlSb layer. In this work, we have demonstrated excellent dc and rf performance on both devices and low-noise amplifiers (LNAs) using 0.1 μm In
₀₂
Al
₀₈
Sb-InAs HEMTs on 3-inch GaAs substrates. This accomplishment is crucial for phased-array applications with ultralow-power and oxidation-free requirements.