A new model for 1/f noise in high-κ MOSFETs

A new 1/f noise model based on correlated number-mobility fluctuations theory is proposed to account for the low frequency noise in MOSFETs with multi-layered gate dielectrics. In this new model, the trap density profile takes into account the effects of energy and spatial distribution as well as the multilayer structure of the gate-stack. Correlated number and mobility fluctuation was experimentally verified as the dominant mechanism for 1/f noise, with no contribution from remote phonon scattering to the observed fluctuations. The model was experimentally verified on devices having different interfacial layer (IL) thicknesses and various fabrication processes over a wide temperature and bias range.