Modeling of temperature characteristics for metal-ferroelectric-insulator-semiconductor devices

Modeling of temperature characteristics for metal-ferroelectric-insulator-semiconductor devices is given in detail in this paper. Based on the Miller model, the polarization, the electric field in ferroelectric layer, surface potential, and drain-to-source current with gate voltage are investigated over a wide temperature range from 300K to 600K. From the model results, for the first time, we find that the semiconductor substrate can lead to the ferroelectric imprint under different temperatures, and there exists a zero-temperature-coefficient bias point in the transfer characteristic curves as conventional metal-oxide-semiconductor devices.