CMOS dual-wideband low-noise amplifier with notch filter for 3.1GHz–10.6GHz ultra-wideband wireless receiver

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz–4.9GHz and 10.34dB maximum power gain between 6.0GHz–10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz–4.9GHz frequency band and the 6.0GHz–10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than ‒8.31 dB in all bandwidth have been achieved.