7E-4 Enhanced Power Handling and Quality Factor in Thin-Film Piezoelectric-on-Substrate Resonators

In this paper, we report on the superior quality factor and power handling of thin-film piezoelectric-on-substrate (TPoS) resonators. A maximum Q of 17000 in vacuum is measured for an AIN-on-Silicon resonator at ~35MHz, and a maximum f.Q product of ~2.9x10
¹²
is measured in air for a device resonating at 500MHz. AIN-on-Silicon resonators are fabricated on a 10 mum thick SOI substrate where the A1N film is 1 mum thick. The quality factor and the power handling are measured and compared before and after removing the structural silicon layer from the backside of a resonator. The measured results verify the advantages of including a silicon substrate in the resonant structure for oscillator applications.