Anti-Static Robustness Enhancement and High-Frequency Noise Pickup Immunity by Internal Shunting for Tunneling Magnetoresistive Sensors

Internal shunting is introduced on tunneling magnetoresistive heads to enhance device anti-static robustness and external high-frequency noise pickup immunity. The details of the shunting scheme and the mechanism leading to both anti-static robustness and reduced high-frequency noise pickup are discussed.