A Investigation into X-ray Radiation of VDMOS

In this study, the investigation into X-ray radiation of VDMOS is described. A radiation test of VDMOS was made by X-ray at various loads. The different radiation behavior of VDMOS was observed. The "rebound" of the threshold voltage shift of VDMOS at a larger load with X-ray radiation was larger than that without X-ray radiation, indicating that a radiation annealing effect happened to VDMOS at a powerful load. In terms of transconductance, all the radiated samples showed an increase in interface traps (Qit). At 9.84 × 10
⁵
rad (Si), the interface traps increments at a large load and at a small load were 6.3 × 10
¹¹
/cm
²
and 5. 12 × 10
¹¹
/cm
²
, respectively. A timely annealing effect is a major factor contributing to the "rebound" of the threshold voltage shift, and caused by anneal of VDMOS weak inversion interface traps whose equivalent charge is -2.31×10
¹¹
/cm
²
.