Thin Film Formations of Ferroelectric Material Bi3Nd1Ti3O12 (BNT), High-k Materials SrTiO3 (STO) and Nb-doped SrTiO3(Nb-STO) by Newly Developed MOCVD System

The mass production system of MOCVD, which has the originally designed vaporizer and liquid source delivery system, has been developed for FeRAM-LSI, DRAM-LSI and so on. In this work, the thin film formations of ferroelectric materials Bi
₃
Nd
₁
Ti
₃
O
₁₂
(BNT), high-k materials SrTiO
₃
(STO) and Nb-doped SrTiO
₃
(Nb-STO) by newly developed MOCVD system were extensively examined.