Preparation of Ferroelectric NaNbO3 Thin Films on MgO Substrate by Pulsed Laser Deposition

We have successfully fabricated good quality NaNbO
₃
films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO
₃
(SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO
₃
film was deposited. X-ray diffraction showed that the NaNbO
₃
film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The
P-E
hysteresis loop of the NaNbO
₃
film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO
₃
films epitaxially grown on (100)SrTiO
₃
substrate.