Preparation and characterization of Bi-perovskite oxide films for piezo applications

Thin films of BiFeO
₃
0-BiScO
₃
(BFO-BSO) solid-solution were fabricated for improving electrical resistivity of BiFeO
₃
-based films by replacing electrically-unstable Fe
³⁺
for stable Sc
³⁺
. The films with chemical composition of Bi(Fe
_1-x
, Sc
_x
)O
₃
were fabricated on (111)Pt/TiO
₂
/SiO
₂
/(100)Si by chemical solution deposition technique. Single phase of perovskite was obtained in the range of x = 0-0.3, where selective replacement of Fe
³⁺
and Sc
³⁺
was confirmed by Raman measurement. The leakage current density of BFO-BSO film was reduced by increasing x. Well-saturated polarization -electric field hysteresis loop was obtained for BFO-BSO film with x = 0.15.