Theoretical and Experimental Analysis of Temperature-Insensitive 655-nm Resonant-Cavity LEDs

Visible InGaP/InGaAlP resonant-cavity light-emitting diodes with low temperature sensitivity output characteristics were demonstrated. By means of extending the resonant cavity to a thickness of three wavelength (3 λ), the degree of power variation between 25 and 95 °C for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1-λ cavity) to -0.6 dB. Numerical simulation showed that the insensitive temperature dependence of output characteristics was attributed to the reduced electron leakage current.