Effect of nitride passivation on the Si nanocluster-Er coupling and Er optical activity

We have investigated the Er
³⁺
photoluminescence (PL) properties from Er doped Si-rich Si nitride (SRSN) films. Based on a comparison with Er doped Si-rich Si oxide (SRSO) films, breaking of nc-Si / Er coupling and Er deactivation in Er doped SRSN film are strongly reduced. We suggest that SRSN can be an effective alternative to SRSO for obtaining efficient Er activity.