Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.