DC and RF characteristics of HfO2 in metal-inaulator-metal capacitor

We have investigated the DC and RF characteristics of Si/SiO
2
(∼4μm)/Ti/Pt-HfO
2
-Al metal-insulator-metal (MIM) devices. We demonstrate in this work that the MIM capacitors with high-k HfO
2
films result in the better DC and RF properties than those obtained using either SiO
2
or Si
3
N
4
. Both high capacitance density and small frequency-dependent capacitance reduction were observed in the MIM capacitors in which HfO
2
was employed for an insulator.