Inverstigation of a-SixGe1∼x:H nano films deposited by RF magnetron sputtering for heterojunction silicon solar cells

Hydrogenated amorphous silicon germanium (a-SiGe:H) thin films were deposited at 400 °C by RF magnetron sputtering, with forming gas (mixture of argon and 4% hydrogen). A film thickness of 100nm was obtained by using a selective target of a-Si
x
Ge
1-x
(x=0.92). In order to study the properties of the films prepared by this method, the samples were examined by alpha-step (α-step), atomic force microscopy (AFM) and scanning electron microscope (SEM) — energy dispersive Xray (EDX). Measurements showed that this film has a nanothickness and nano-morphology. And this film has a possibility for solar cells that the optical band gap of the thin film, which is from 1.7 to 1.0eV. Accordingly, this film will be expected for improvement on hetero-junction solar cells application ability.