Interfacial layer thickness dependence of the low- frequency noise in high-k dielectric MOSFETs

We present the results of simulation study on the lowfrequency excess noise in high-k HfO{si2}/SiO
2
dual dielectric n- MOSFET’s. Based on the ‘Unified Model’ where the tunneling to the traps in the oxides is the major noise generation mechanism, we show how the low frequency noise density depends on the thickness of the interfacial oxide layer.