Fabrication of Si1-xGex alloy nanowire FETs

we have fabricated field effect transistors (FETs) by using high quality Si
1-x
Ge
x
alloy nanowires. To obtain stable contacts between Si
1-x
Gex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300 °C furnace with Ar atmosphere or RTA at 400 °C [4] Three different Si
1-x
Ge
x
alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si
1x
Ge
x
alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 10
⁶
observed from Si
0.7
Ge
0.3
nanowire field effect transistor.