Boron ion implantation on Al-doped ZnO films for OLEDs transparent conducting electrodes

B
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-implanted Al-doped ZnO (AZO) films were fabricated by ion implantation with various ion energies and doses for transparent conducting oxide (TCO) electrodes of organic light-emitting diodes (OLEDs). The resistance of the B
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- implanted AZO films was decreased with increasing ion dose. The work function of the implanted films was increased compared to the un-implanted AZO films. All implanted films exhibited high optical transmittance (average transmittance above 87%) in the visible range up to 800nm wavelength. we could control work function, resistance and transmittance individually by changing ion dose and ion energy during implantation.