Magnetic and electronic properties of Mn delta-doped (Ga0.995Mn0.005)N thin films

The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga
0.995
Mn
0.005
)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga
0.995
Mn
0.005
)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.