Growth of nickel silicide nanowires by chemical vapor deposition

We report the growth process of Ni-silicide nanowires by chemical vapor deposition using SiH
4
as a precursor. We have found systematic variation of shapes and compositions of Nisilicide nanostructures from thin films to nanowires with growth variables such as growth temperature and SiH
4
partial pressure. Based upon one-dimensional Ni diffusion model, we discuss the growth mechanism of Ni-silicide nanowire.