Low Temperature Crystallization of Bismuth Zinc Niobate Thin Films by Pulsed Laser Annealing

Low temperature crystallization of chemical solution derived Bi
_1.5
Zn
_0.5
Nb
_1.5
O
_6.5
films by using pulsed laser annealing was achieved. The effects of laser energy density, irradiation time and film thickness on the sample structure and electrical properties were systematically studied. Crystallized films were obtained with laser irradiation at room temperature, but laser induced defects degrade the dielectric strength of the film and increase the dielectric loss. It was found that the crystallinity and dielectric properties were significantly improved after a post-annealing at 400degC for 2 h in oxygen atmosphere. Bi
_1.5
Zn
_0.5
Nb
_1.5
O
_6.5
films with dielectric properties comparable to that of rapid thermal annealed samples were achieved at temperatures les 400degC, which makes integration with polymeric substrates possible.