Extremely low-threshold room-temperature electron beam pumped green semiconductor lasers grown by MBE

In the present paper we report on the results of studies of EBP lasers based on the CdSe/ZnSe QD structures with an ultra thin upper cladding layer. Usage of thin top claddings allows to obtain lasing at electron beam energy as low as 3.7 keV. The CdSe/ZnSe/ZnMgSSe laser structures were grown by molecular beam epitaxy (MBE) pseudomorphically on GaAs (001) substrates via a GaAs MBE buffer.